Comparison Between Graphene and GaAs Quantized Hall Devices With a Dual Probe
Authors:
- Shamith U. PayagalaSPShamith U. Payagala
- Albert F. RigosiARAlbert F. Rigosi
- Alireza R. PannaAPAlireza R. Panna
- Alessio PollaroloAPAlessio Pollarolo
- Mattias KruskopfMKMattias Kruskopf
- Stephan SchlammingerSSStephan Schlamminger
- Dean G. JarrettDJDean G. Jarrett
- Ryan BrownRBRyan Brown
- Randolph E. ElmquistRERandolph E. Elmquist
- Duane BrownDBDuane Brown
- David B. NewellDNDavid B. Newell
- 24 June 2020
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 69 (12) , 9374-9380
Abstract
A graphene quantized Hall resistance (QHR) device fabricated at the National Institute of Standards and Technology, Gaithersburg, MD, USA, was measured alongside a GaAs QHR device fabricated by the National Research Council of Canada, Ottawa, ON, Canada, by comparing them to a 1-kΩ standard resistor using a cryogenic current comparator. The two devices were mounted in a custom developed dual probe that was then assessed for its viability as a suitable apparatus for precision measurements. The charge carrier density of the graphene device exhibited controllable tunability when annealed after Cr(CO) 3 functionalization. These initial measurement results suggest that making resistance comparisons is possible with a single- probe wired for two types of quantum standards-GaAs, the established material, and graphene - the newer material that may promote the development of more user-friendly equipment.Keywords
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