Measurements of etch rate and film stoichiometry variations during plasma etching of lead-lanthanum-zirconium-titanate thin films

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Abstract
Plasma etching of lead‐lanthanum‐zirconium‐titanate (PLZT) ferroelectric thin films using a dc hollow‐cathode discharge in CF4 and dilute HCl has been investigated. The etch rate and film stoichiometry variations of sputter‐deposited lead‐lanthanum‐titanate (PLT), and solution‐deposited PLT, lead‐zirconium‐titanate (PZT), and PLZT have been measured over a wide range of etching conditions. Etching does not take place at room temperature, but requires substrate heating above 200 °C. Etch rate and film stoichiometry varied strongly as a function of substrate temperature, gas mixture, and film preparation method. For sputter‐deposited films, the fastest etch rates of 6500 Å/h were obtained using a mixture of CF4 and dilute HCl. Etch rates for solution‐deposited films were higher than for sputter‐deposited films, reaching 2000 Å/min in CF4.