Conduction properties of the Au-n-type—Si Schottky barrier
Author:
- 1 May 1963
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 6 (3) , 281-295
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- METALS CONTACTS ON CLEAVED SILICON SURFACESAnnals of the New York Academy of Sciences, 1963
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962
- Mean Free Path of Photoexcited Electrons in AuPhysical Review Letters, 1962
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960
- Hall and Drift Mobilities; Their Ratio and Temperature Dependence in SemiconductorsPhysical Review B, 1957
- Rectification Properties of Metal-Silicon ContactsJournal of Applied Physics, 1957
- Zur Theorie des Germaniumgleichrichters und des TransistorsThe European Physical Journal A, 1953