Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz
Authors:
- K. UedaKUK. Ueda
- M. SchwittersMSM. Schwitters
- D.J. TwitchenDTD.J. Twitchen
- G.A. ScarsbrookGSG.A. Scarsbrook
- S.E. CoeSCS.E. Coe
Top Cited Papers
- 26 June 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (7) , 570-572
Abstract
Using high-quality polycrystalline chemical-vapor-deposited diamond films with large grains (/spl sim/100 μm), field effect transistors (FETs) with gate lengths of 0.1 μm were fabricated. From the RF characteristics, the maximum transition frequency f T and the maximum frequency of oscillation f max were /spl sim/ 45 and /spl sim/ 120 GHz, respectively. The f T and f max values are much higher than the highest values for single-crystalline diamond FETs. The dc characteristics of the FET showed a drain-current density I/sub DS/ of 550 mA/mm at gate-source voltage V/sub GS/ of -3.5 V and a maximum transconductance g/sub m/ of 143 mS/mm at drain voltage V/sub DS/ of -8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices.Keywords
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