Recent progress on highly efficient and long-lifetime AlGaN-based light-emitting diodes
Open Access
- 1 October 2025
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 18 (10) , 102001
Abstract
The impact of heterostructure variations on the AlGaN-based ultraviolet-C light-emitting diodes (UVC-LEDs) device performance and secondary ion mass spectrometry (SIMS) profiles were studied. To improve the crystalline quality of the p-layer adjacent to the active region based on H-atom behavior from SIMS profile, reducing the Mg concentration to values 17 cm−3 increased considerably the device’s lifetime. The obtained long-lifetime of the UVC-LED exhibited an output power of 158 mW at 350 mA.Keywords
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