Characteristics of Semi-Aqueous Cleaning Solution with Carboxylic Acid for the Removal of Copper Oxides Residues

This publication has 16 references indexed in Scilit:

• Study on the Effects of Corrosion Inhibitor According to the Functional Groups for Cu Chemical Mechanical Polishing in Neutral Environment
  Korean Chemical Engineering Research, 2015
• Dissolution of copper oxide by the ethanolamine and ammonium fluoride in aqueous solution
  Surface and Interface Analysis, 2011
• Dissolution and electrochemical impedance spectroscopy studies of thin copper oxide films on copper in semi-aqueous fluoride solutions
  Microelectronic Engineering, 2010
• Developments of Plasma Etching Technology for Fabricating Semiconductor Devices
  Japanese Journal of Applied Physics, 2008
• Implications of the Selectiveness of Cu Chelators on Cu0, Cu(I)O and Cu(II)O Powders
  Solid State Phenomena, 2007
• Oxalic Acid as a Complexing Agent in CMP Slurries for Copper
  Electrochemical and Solid-State Letters, 2005
• Materials' Impact on Interconnect Process Technology and Reliability
  IEEE Transactions on Semiconductor Manufacturing, 2005
• Characterization of low-k dielectric trench surface cleaning after a fluorocarbon etch
  Thin Solid Films, 2004
• Challenges of interconnection technology till the end of the roadmap and beyond
  Microelectronic Engineering, 2002
• Requirements for contamination control in the gigabit era
  IEEE Transactions on Semiconductor Manufacturing, 1997