Giant Magnetoresistance in Organic Spin Valves

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Abstract
Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to $\sim${}300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.

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