Influence of high-energy electron induced synergistic radiation effects on data upsets in NAND flash memory

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Abstract
NAND Flash memory, featuring high-speed read/write capability, high-density storage, and low power consumption, is widely employed in satellite, detector, and spacecraft storage systems. With the increasing proliferation of electronic devices, there has been a corresponding rise in research and attention towards the single event effect (SEE) induced by high-energy electrons in flash memory technologies. In this work, a simulation study is conducted to investigate data bit upsets in NAND Flash memory induced by high-energy electrons. The results show that high-energy electrons can trigger both SEE and total ionizing dose effect (TID) in the floating-gate cells, resulting in threshold voltage shifts and data bit reversals. At lower electron energies, the synergistic interaction becomes more pronounced with increasing energy, leading to an increase in the upset cross-section. When the electron energy reaches 10 MeV, the upset cross-section attains its maximum and then tends to stabilize. This behaviour is mainly attributed to the maximum energy deposition in the sensitive region of the floating-gate cell, where the TID-induced degradation significantly enhances its SEE sensitivity.

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