High-performance Ka-band monolithic low-noise amplifiers using 0.2-μm dry-recessed GaAs PHEMTs
Authors:
- 1 July 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 6 (7) , 253-255
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recessIEEE Transactions on Electron Devices, 1995
- Pseudomorphic HEMT manufacturing technology for multifunctional Ka-band MMIC applicationsIEEE Transactions on Microwave Theory and Techniques, 1995
- A high-performance monolithic Q-band InP-based HEMT low-noise amplifierIEEE Microwave and Guided Wave Letters, 1993
- A D-band monolithic fundamental oscillator using InP-based HEMT'sIEEE Transactions on Microwave Theory and Techniques, 1993
- High-frequency equivalent circuit of GaAs FETs for large-signal applicationsIEEE Transactions on Microwave Theory and Techniques, 1991