High Speed Epitaxial Perovskite Memory on Flexible Substrates

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Abstract
Single-crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.
Funding Information
  • Office of Naval Research
  • Army Research Office
  • Air Force Office of Scientific Research
  • National Science Foundation

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