Measured negative differential resistivity for GaN Gunn diodes on GaN substrate
Authors:
- 12 April 2007
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 43 (8) , 480-482
Abstract
Current-voltage characteristics obtained by pulse-biasing GaN Gunn diodes on GaN substrate showed a wide negative differential resistance (NDR) region. Electrical fields of up to twice the threshold value did not lead to any electromigration effects from the contacts. The electron drift-velocity (vD) was estimated to be 1.9×107 cm/s. This represents the first demonstration of a stable NDR with a vertical GaN-based Gunn device.Keywords
This publication has 6 references indexed in Scilit:
- Technology aspects of GaN-based diodes for high-field operationSuperlattices and Microstructures, 2006
- Terahertz generation in submicron GaN diodes within the limited space-charge accumulation regimeJournal of Applied Physics, 2005
- Bulk GaN and AlGaN∕GaN heterostructure drift velocity measurements and comparison to theoretical modelsJournal of Applied Physics, 2005
- GaN: Processing, defects, and devicesJournal of Applied Physics, 1999
- Direct observation of transferred-electron effect in GaNApplied Physics Letters, 1995
- Monte Carlo calculation of the velocity-field relationship for gallium nitrideApplied Physics Letters, 1975