Room temperature oxidation of silicon induced by UV irradiation of Cu3Si
Authors:
- Jian LiJLJian Li
- J.W. MayerJMJ.W. Mayer
- L.J. MatienzoLML.J. Matienzo
- F. EmmiFEF. Emmi
Open Access
- 31 December 1992
- journal article
- review article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 32 (4) , 390-393
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Study of Low-Temperature Oxidation in Au/Si and Cu/Si Systems by 7-MeV Alpha Particle Backscattering AnalysisJapanese Journal of Applied Physics, 1992
- Silicon Oxidation and Fixed Oxide ChargeJournal of the Electrochemical Society, 1992
- Room-temperature oxidation of silicon catalyzed by Cu3SiApplied Physics Letters, 1990
- Formation, oxidation, electronic, and electrical properties of copper silicidesJournal of Applied Physics, 1990
- Copper-catalyzed etching of silicon by F2: Kinetics and feature morphologyJournal of Applied Physics, 1988
- Oxidation behavior of Au-Si filmsApplied Physics Letters, 1987
- Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si systemJournal of Vacuum Science and Technology, 1981
- Formation of silicon oxide over gold layers on silicon substratesJournal of Applied Physics, 1972
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965