Direct wafer bonding of amorphous or densified atomic layer deposited alumina thin films
- 3 February 2015
- journal article
- Published by Springer Nature in Microsystem Technologies
- Vol. 21 (5) , 953-959
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Formation of III–V-on-insulator structures on Si by direct wafer bondingSemiconductor Science and Technology, 2013
- Measurement of bonding energy in an anhydrous nitrogen atmosphere and its application to silicon direct bonding technologyJournal of Applied Physics, 2012
- Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memoriesJournal of Vacuum Science & Technology B, 2011
- A model of interface defect formation in silicon wafer bondingApplied Physics Letters, 2009
- Low Temperature Wafer BondingECS Transactions, 2008
- Annealing of Al2O3thin films prepared by atomic layer depositionJournal of Physics D: Applied Physics, 2007
- Integration of buried insulators with high thermal conductivity in SOI MOSFETs: Thermal properties and short channel effectsSolid-State Electronics, 2005
- Crystallization behavior of thin ALD-Al2O3 filmsThin Solid Films, 2003
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988
- Evaluation of GIC of a DCB Specimen Using an Anisotropic SolutionJournal of Composites Technology and Research, 1988