Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge Plasma
Authors:
- Akihisa MatsudaAMAkihisa Matsuda
- Masato KoyamaMKMasato Koyama
- Nozomu IkuchiNINozomu Ikuchi
- Yuichiro ImanishiYIYuichiro Imanishi
- Kazunobu TanakaKTKazunobu Tanaka
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1A) , L54
Abstract
A guiding principle has been proposed for the preparation of high-photosensitive hydrogenated amorphous Si–Ge alloys (a-SiGe:H) via the plasma chemical-vapor-deposition technique. According to this principle, plasma parameters in a diode-type reactor were systematically controlled, resulting in high-quality a-SiGe:H films in the optical-gap range between 1.4 and 1.8 eV. Photoconductivity-to-dark-conductivity ratio of the best-designed a-SiGe:H with 1.45 eV optical gap was found to reach 104.Keywords
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