Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$
Authors:
- 1 November 2013
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 60 (12) , 4020-4026
Abstract
Phase change memory (PCM) is the most mature among the novel memory concepts. Embedded PCM technology can be a real breakthrough for process cost saving and performances. Nevertheless, for specific applications some improvement in high temperature data retention characteristics is needed. In this paper, we present an optimized GexSbyTez phase change material, able to guarantee code integrity after soldering thermal profile and data retention in extended temperature range. In particular, extrapolation of data retention at 10 years for temperatures higher than 150°C cell level has been demonstrated, thus enabling automotive applications. Despite the tradeoff between the SET speed and RESET data retention, competitive performances with respect to present floating gate memories have been confirmed. Finally, solid data collection based on a 4-Mb test chip integrated in a standard 90-nm CMOS technology platform has been performed. Functionality and performances are well in line with today industrial targets.Keywords
This publication has 18 references indexed in Scilit:
- Thermochemical resistive switching: materials, mechanisms, and scaling projectionsPhase Transitions, 2011
- Evidence of Crystallization–Induced Segregation in the Phase Change Material Te-Rich GSTJournal of the Electrochemical Society, 2011
- Understanding amorphous phase-change materials from the viewpoint of Maxwell rigidityPhysical Review B, 2010
- Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric fieldApplied Physics Letters, 2009
- Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and ChallengesAdvanced Materials, 2009
- Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materialsand GeTePhysical Review B, 2007
- Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention2007
- Existence of tetrahedral site symmetry about Ge atoms in a single-crystal film of Ge2Sb2Te5 found by x-ray fluorescence holographyApplied Physics Letters, 2007
- Crystallization Behavior and Physical Properties of Sb-Excess Ge[sub 2]Sb[sub 2+x]Te[sub 5] Thin Films for Phase Change Memory (PCM) DevicesJournal of the Electrochemical Society, 2006
- Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materialsJournal of Non-Crystalline Solids, 2002