Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells

This publication has 25 references indexed in Scilit:

• High internal and external quantum efficiency InGaN/GaN solar cells
  Applied Physics Letters, 2011
• Substrate-free large gap InGaN solar cells with bottom reflector
  Solid-State Electronics, 2010
• Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells
  Applied Physics Letters, 2010
• Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells
  Applied Physics Letters, 2010
• Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells
  IEEE Electron Device Letters, 2009
• Potential of Mn doped In1−xGaxN for implementing intermediate band solar cells
  Solar Energy Materials and Solar Cells, 2009
• High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
  Applied Physics Letters, 2008
• Design and characterization of GaN∕InGaN solar cells
  Applied Physics Letters, 2007
• Optical bandgap energy of wurtzite InN
  Applied Physics Letters, 2002
• Unusual properties of the fundamental band gap of InN
  Applied Physics Letters, 2002