The misfit dislocation structure of an InGaAs/GaAs heterojunction with low misfit
Authors:
- J.S. AhearnJAJ.S. Ahearn
- C. LairdCLC. Laird
- C.A.B. BallCBC.A.B. Ball
- 1 April 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 42 (1) , 117-125
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Use of misfit strain to remove dislocations from epitaxial thin filmsThin Solid Films, 1976
- On Dislocations in GaAs1−xPxIBM Journal of Research and Development, 1975
- The interpretation of dislocation contrast in x-ray topographs of GaAs1−x PxJournal of Applied Physics, 1974
- Elimination of dislocations in heteroepitaxial layers by the controlled introduction of interfacial misfit dislocationsApplied Physics Letters, 1974
- Like-sign asymmetric dislocations in zinc-blende structureApplied Physics Letters, 1972
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Evidence for pseudomorphic growth of iron on copperPhilosophical Magazine, 1967
- Accommodation of misfit across the interface between single-crystal films of various face-centred cubic metalsPhilosophical Magazine, 1966
- On the Plasticity of Germanium and Indium AntimonideActa Metallurgica, 1957