Monolithically Integrated Bidirectional Gate ESD Protection Scheme of p-GaN Power HEMT by Dual-Gate Device Technology
- 8 November 2024
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 40 (2) , 2721-2725
Abstract
This letter proposes a monolithically integrated bidirectional gate electrostatic discharge protection scheme for p-GaN power high-electron-mobility transistors (HEMTs), in which a dual-gate HEMT is designed as the discharging transistor. With this protection scheme, the forward/reverse transmission line pulsing failure current is enhanced from 0.156 A/0.08 A to 1.36 A/5.26 A, almost without sacrificing performances of the p-GaN power HEMT. Thanks to the bidirectional switching characteristics of the dual-gate device by sharing the drift region, only one discharging transistor is required in the scheme; as a result, the area of this protection scheme can be effectively saved by 40.8% compared to state-of-the-art scheme with the same protection capability.Keywords
Funding Information
- National Natural Science Foundation of China (62204034, 62174029)
- China Postdoctoral Science Foundation (2022TQ0061, 2022M720710)
- Jiangsu Funding Program for Excellent Postdoctoral Talent (2022ZB83)
- Distinguished Young Scientists Foundation of Jiangsu Province (BK20230025)
- Natural Science Foundation of Jiangsu Province (BK20243037)
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