Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation
Authors:
- 1 April 2006
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 45 (4S) , 3398-3400
Abstract
No abstract availableKeywords
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