Schottky barrier diodes for millimeter wave detection in a foundry CMOS process
Authors:
- 27 June 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (7) , 492-494
Abstract
CoSi/sub 2/-Si Schottky barrier diodes on an n-well and on a p-well/substrate are fabricated without a guard ring in a 130-nm foundry CMOS process. The nand p-type diodes with an area of 16/spl times/0.32/spl times/0.32 /spl mu/m/sup 2/ achieve cutoff frequencies of /spl sim/1.5 and /spl sim/1.2 THz at 0-V bias, respectively. These are the highest cutoff frequencies for Schottky diodes fabricated in foundry silicon processes. The leakage currents at 1.0-V reverse bias vary between 0.4 to 10 nA for the n-type diodes. The break down voltage for these diodes is around 15 V. It should be possible to use these in millimeter wave and far infrared detection.Keywords
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