Ferroelectric properties of Bi4−xLaxTi3O12 (x=0, 0.75) thin films prepared by sol–gel method
Authors:
- 1 September 2007
- journal article
- research article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 142 (2-3) , 135-138
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Applications of Modern FerroelectricsScience, 2007
- High-performance solution-processed polymer ferroelectric field-effect transistorsNature Materials, 2005
- Structural visualization of polarization fatigue in epitaxial ferroelectric oxide devicesNature Materials, 2004
- Electrical properties of Bi3.25La0.75Ti3O12/LaAlO3/Si structures for ferroelectric field effect transistor applicationsJournal of Physics D: Applied Physics, 2004
- X-ray photoemission spectroscopy characterization of the electrode-ferroelectric interfaces in and capacitors: Possible influence of defect structure on fatigue propertiesPhysical Review B, 2003
- Sol–gel synthesis and property studies of layered perovskite bismuth titanate thin filmsMaterials Chemistry and Physics, 2003
- Crystal and electronic structures of Bi4−xLaxTi3O12 ferroelectric materialsApplied Physics Letters, 2001
- Randomly oriented Bi4Ti3O12 thin films derived from a hybrid sol–gel processThin Solid Films, 2000
- Lanthanum-substituted bismuth titanate for use in non-volatile memoriesNature, 1999
- Ferroelectric MemoriesScience, 1989