Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments
- 1 December 2010
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 28.4.1-28.4.4
Abstract
This paper demonstrates the switching of several conductive filaments in RRAM using a small-size FUSI gate NMOS transistor. The theory for predicting the maximum applicable Vset is elaborated. Modeling of filament conduction with a quantum mechanical model reveals that the reset operation corresponds to a narrowing of the filament.Keywords
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