Recent Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM
Authors:
- 1 June 2020
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-2
Abstract
In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies. However, for further expansion of MRAM applications and markets, higher reliability, larger capacity or speed are required. In this invited paper, we describe our recent progresses in STT-/SOT-MRAM fabricated under developed 300mm integration process (PVD, RIE etc.) [4] with advanced spintronics device technologies, such as quad-interface MTJ [10] and canted SOT device [12].Keywords
Funding Information
- CIES's Industrial Affiliation on STT MRAM program