Layer Thinning and Etching of Mechanically Exfoliated MoS2 Nanosheets by Thermal Annealing in Air
Abstract
A simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS2 nanosheets in air is reported. Using this method, single‐layer (1L) MoS2 nanosheets are achieved after the thinning of MoS2 nanosheets from double‐layer (2L) to quadri‐layer (4L) at 330 °C. The as‐prepared 1L MoS2 nanosheet shows comparable optical and electrical properties with the mechanically exfoliated, pristine one. In addition, for the first time, the MoS2 mesh with high‐density of triangular pits is also fabricated at 330 °C, which might arise from the anisotropic etching of the active MoS2 edge sites. As a result of thermal annealing in air, the thinning of MoS2 nanosheet is possible due to its oxidation to form MoO3. Importantly, the MoO3 fragments on the top of thinned MoS2 layer induces the hole injection, resulting in the p‐type channel in fabricated field‐effect transistors.Keywords
This publication has 44 references indexed in Scilit:
- Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheetsNature Communications, 2013
- Electrochemically Reduced Single‐Layer MoS2 Nanosheets: Characterization, Properties, and Sensing ApplicationsSmall, 2012
- Single-Layer MoS2PhototransistorsACS Nano, 2011
- Fabrication of Single‐ and Multilayer MoS2 Film‐Based Field‐Effect Transistors for Sensing NO at Room TemperatureSmall, 2011
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- Atomically Thin: A New Direct-Gap SemiconductorPhysical Review Letters, 2010
- Measurement of the Elastic Properties and Intrinsic Strength of Monolayer GrapheneScience, 2008
- Superior Thermal Conductivity of Single-Layer GrapheneNano Letters, 2008
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004
- Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenidesThe Journal of Physical Chemistry, 1982