Electrical characterization of 1.8 MeV proton-bombarded ZnO
Authors:
- 5 November 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (19) , 3074-3076
Abstract
We report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons. From capacitance–voltage measurements, we found that ZnO is remarkably resistant to high-energy proton bombardment and that each incident proton removes about two orders of magnitude less carriers than in GaN. Deep level transient spectroscopy indicates a similar effect: the two electron traps detected are introduced in extremely low rates. One possible interpretation of these results is that the primary radiation-induced defects in ZnO may be unstable at room temperature and anneal out without leaving harmful defects that are responsible for carrier compensation.Keywords
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