Effects of lamp power and mirror position on the interface shape of the silicon molten zone during infrared convergent heating
- 19 March 2014
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in CrystEngComm
- Vol. 16 (21) , 4619-4623
Abstract
The effects of lamp power and mirror position on the feed–melt and crystal–melt interfaces during the growth of a silicon crystal were examined using the mirror-shifting-type infrared convergent-heating floating-zone (IR-FZ) method.Keywords
This publication has 17 references indexed in Scilit:
- Silicon crystal growth by the modified FZ techniqueCrystEngComm, 2013
- Float-Zone silicon crystal growth at reduced RF frequenciesJournal of Crystal Growth, 2012
- Crystal growth of rutile by tilting-mirror-type floating zone methodJournal of Crystal Growth, 2012
- Growth of large La2−xSrxCuO4 single crystals using tilting-mirror-type infrared heating image furnacePhysica C: Superconductivity and its Applications, 2012
- Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental resultsJournal of Crystal Growth, 2011
- Reduced Etch Pit Density of Rutile (TiO2) Single Crystals by Growth Using a Tilting-Mirror-Type Infrared Heating Image FurnaceCrystal Growth & Design, 2010
- Effects of tilting mirrors on the solid–liquid interface during floating zone growth using tilting-mirror-type infrared-heating image furnaceJournal of Crystal Growth, 2010
- The optical floating zone technique: A review of experimental procedures with special reference to oxidesProgress in Crystal Growth and Characterization of Materials, 2008
- Large diameter silicon technology and epitaxyMicroelectronic Engineering, 1999
- Solid-liquid interface shapes in the floating zone growth of rutile single crystalsMaterials Research Bulletin, 1994