Evolution of Spectral Function in a Doped Mott Insulator: Surface vs Bulk Contributions
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- 30 March 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 80 (13) , 2885-2888
Abstract
We study the evolution of the spectral function with progressive hole doping in a Mott insulator, with . The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter is shown to describe consistently the spectral evolution.
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