Atomic Layer Deposition of V1–xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation

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Abstract
V1-xMoxO2 thin films were fabricated by nanolamination of VO2/MoO3 alternating layers using atomic layer deposition (ALD) process, in which tetrakis-dimethyl-amino vanadium (IV) [V(NMe2)4] and molybdenum hexacarbonyl (VI) [Mo(CO)6] were used as vanadium precursor and molybdenum precursor respectively. The dopant content of V1-xMoxO2 films was controlled by adjusting MoO3 cycle percentage (PMo) in ALD pulse sequence, which was varied from 2% to 10%. Effects of PMo on V1-xMoxO2 crystal structure, morphology, semiconductor-to-metal transition (SMT) properties and optical transmittance were studied. A linear reduction of phase transition temperature (Tc) by approximately -11 °C/cycle% Mo was observed for V1-xMoxO2 films within PMo≤5%. Notably, dramatic enhanced luminous transmittance (Tlum=63.8%) and solar modulation (ΔTsol=23.5%) were observed for V1-xMoxO2 film with PMo=7%.
Funding Information
  • Chinese Academy of Sciences (16S083)

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