LASER-INDUCED BREAKDOWN SPECTROSCOPY FOR THE STUDY OF THE PATTERN OF SILICON DEPOSITION IN LEAVES OFSACCHARUMSPECIES

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Abstract
The spatial distribution pattern of silicon in the leaves of three species of Saccharum has been demonstrated by means of laser induced breakdown spectroscopy (LIBS). The in-situ point detection capability of LIBS was used to determine different elements in leaf samples. The concentrations of silicon and other elements in different parts of the leaves were estimated by measuring the intensities of their corresponding atomic lines. Silicon, deposited in the form of phytoliths, was also isolated by using the dry ash technique. LIBS observations showed that in all three Saccharum species, the concentration of silicon was highest in the midrib followed by that found in margin and vein areas. The concentration of silicon in S. officinarum is higher in comparison to S. spontaneum and S. bengalense. Furthermore, the concentration of silicon at the upper surface of the leaf was larger than at the lower surface. The LIBS spectra of Saccharum species also show the presence of spectral lines of Na, Mg, Ca, Fe, and K.

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