Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors
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- 26 August 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (9) , 1627-1629
Abstract
Double-quantum-well field-effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity. The voltage tuned resonance is determined by the plasma oscillations of the composite structure. The resonant photoconductivity requires a double-quantum well but the mechanism whereby plasma oscillations produce changes in device conductance is not understood. The phenomenon is potentially important for fast, tunable terahertz detectors.Keywords
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