A monolayer SnS 2 Dirac source field-effect transistor: a promising low-power device superior to its MOSFET counterpart
- 15 October 2026
- journal article
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 18 (39) , 21568-21575
Abstract
A sub-5 nm ML SnS 2 DSFET outperforms its MOSFET counterpart and previously reported graphene-source DSFETs in low-power metrics. This superior performance stems from the n-type ohmic contact with efficient electron tunneling probability.Keywords
Funding Information
- National Natural Science Foundation of China (12274002)
- National Natural Science Foundation of China (91964101)
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