Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

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Abstract
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.
Funding Information
  • Ministry of Science and Technology of the People’s Republic of China (2016YFB0400800, 2016YFB0400101 and 2016YFB0400903, 2016YFB0400800, 2016YFB0400101 and 2016YFB0400903, 2016YFB0400800, 2016YFB0400101 and 2016YFB0400903)
  • National Science Foundation of China | Major Research Plan (62074133, 61974124, 61874090 and 61874091, 62074133, 61974124, 61874090 and 61874091, 62074133, 61974124, 61874090 and 61874091, 62074133, 61974124, 61874090 and 61874091)
  • Chinese Ministry of Science and Technology | Department of S and T for Social Development (2016YFB0400800, 2016YFB0400101 and 2016YFB0400903)
  • Ministry of Science and Technology of the People’s Republic of China
  • Ministry of Science and Technology of the People’s Republic of China

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