Substrate current in GaAs MESFET's

Authors:
  • MSM.S. Shur
    M.S. Shur
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Abstract
It is shown that the substrate current in GaAs MESFET's may be related to the electron injection into the substrate region adjacent to the high-field domain in the active layer. A simple one-dimensional calculation shows that the substrate current Isubis proportional toV\min{ds}\max{1/2}andn\min{0}\max{1/4}where Vdsis the drain-to-source voltage, n0is the doping density in the active layer. Atn_{0} = 10^{17}cm-3andV_{ds} \simeq 10V we estimateI_{\sub} \sim 50mA per millimeter gate in good agreement with experimental results.