Defect-activated first order Raman scattering in boron implanted GaAs
Author:
- 1 July 1974
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 15 (2) , 149-153
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Raman Scattering byCentersPhysical Review Letters, 1965
- Crystal Dynamics of Gallium ArsenidePhysical Review B, 1963
- Infrared Lattice Absorption in Ionic and Homopolar CrystalsPhysical Review B, 1955