Stabilization of Silicon Surfaces by Thermally Grown Oxides*
Authors:
- M. M. AtallaMAM. M. Atalla
- E. TannenbaumETE. Tannenbaum
- E. J. ScheibnerESE. J. Scheibner
- 1 May 1959
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 38 (3) , 749-783
Abstract
A study has been carried out of the stability of silicon surfaces when they are provided with a chemically bound solid-solid interface. Stable surfaces have been obtained with the system silicon-silicon dioxide when the oxide is thermally grown. This...Keywords
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