Rankings
Publications
Search Publications
Cited-by Search
Sources
Publishers
Scholars
Scholars
Top Cited Scholars
Organizations
About
Scilit
About Us
Advisory Board
Data Sources
Career
Support / Contact
User Guide
Publisher User
Search Function
Rankings Function
API Resource
Scilit Knowledge
Metrics
Scilit Recognitions
Publications Classification
Media
News
Blog
Login
Register
Home
Publications
Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon
Home
Publications
Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon
Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon
Authors:
VL
V. Lehmann
V. Lehmann
HF
H. Föll
H. Föll
Citation Alert
Add to Library
Cite
Download
Share
Download
Publisher website
Google Scholar
1 February 1990
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 137
(2)
,
653-659
DOI:
10.1149/1.2086525
Abstract
No abstract available
Cited
Cited by 753 articles
Scroll to top