Electron leakage effects on GaN-based light-emitting diodes
- 29 January 2010
- journal article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 42 (2) , 89-95
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Mg‐related acceptors in GaNphysica status solidi (c), 2010
- Efficiency droop in nitride‐based light‐emitting diodesPhysica Status Solidi (a), 2010
- On the origin of IQE‐‘droop’ in InGaN LEDsphysica status solidi (c), 2009
- Origin of efficiency droop in GaN-based light-emitting diodesApplied Physics Letters, 2007
- Auger recombination in InGaN measured by photoluminescenceApplied Physics Letters, 2007
- Simulation of visible and ultra-violet group-III nitride light emitting diodesJournal of Computational Physics, 2006
- Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfacesApplied Physics Letters, 2004
- Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopyApplied Physics Letters, 2002
- Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructuresApplied Physics Letters, 2002
- Modeling of GaN optoelectronic devices and strain-induced piezoelectric effectsIEEE Journal of Quantum Electronics, 2001