High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Self-aligned inversion-channel ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited ${\mathrm{Al}}_2{\mathrm{O}}_3∕{\mathrm{Ga}}_2{\mathrm{O}}_3\left({\mathrm{Gd}}_2{\mathrm{O}}_3\right)$ (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ MOSFET using a gate dielectric of ${\mathrm{Al}}_2{\mathrm{O}}_3\left(2\mathrm{nm}\text{thick}\right)∕\mathrm{GGO}\left(5\mathrm{nm}\text{thick}\right)$ , a maximum drain current of $1.05\mathrm{A}∕\mathrm{mm}$ , a transconductance of $714\mathrm{mS}∕\mathrm{mm}$ , and a peak mobility of $1300{\mathrm{cm}}^2∕\mathrm{V}\mathrm{s}$ have been achieved, the highest ever reported for III-V inversion-channel devices of $1\mu \mathrm{m}$ gate length.