Mutual Transformation of Flux-Controlled and Charge-Controlled Memristors

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Abstract
Two-ports for mutual transformation between flux-controlled memristors and charge-controlled memristors are proposed. Attention is paid to memristors with the region of negative differential memristance in the charge-flux constitutive relation, when such a transformation should be made carefully. Connections between this transformation, duality rules, and Chua’s table of higher-order elements are described. The proposed transforming cells can be made up of commercially available integrated circuits. Their proper operation is demonstrated via simulations and lab experiments with memristive oscillators.
Funding Information
  • Czech Science Foundation (20-26849S)
  • Project for the Development of the Organization, University of Defence Brno, Czech Republic

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