Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)
Authors:
- D L DheerajDDD L Dheeraj
- M TchernychevaMTM Tchernycheva
- G E CirlinGCG E Cirlin
- J C HarmandJHJ C Harmand
- 12 March 2008
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 19 (15) , 155704
Abstract
We have determined the in-plane orientation of GaN nanowires relative to the Si (111) substrate on which they were grown. We used x-ray diffraction pole figure measurements to evidence two types of crystallographic orientation, all the nanowires having [Formula: see text] lateral facets. The proportion of these two orientations was determined and shown to be influenced by the pre-deposition of Al(Ga)N intermediate layers. In the main orientation, the GaN basal [Formula: see text] directions are aligned with the [Formula: see text] directions. This orientation corresponds to an in-plane coincidence of GaN and Si lattices.Keywords
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