Abstract
This paper proposes a solid-state pulsed power modulator (PPM) with fast rising/falling time and high repetition rates to drive pockels cells. Since the proposed circuit is based on the modular structure using silicon carbide (SiC) metal oxide silicon field effect transistors (MOSFETs) for bypass devices as well as for main switches, it can achieve fast switching speed and high reliability. In addition, by a control scheme employing the voltage difference, the proposed circuit can accomplish a high repetition rate and short pulse width. Design and implementation of 1.8kV PPMs with repetition rate of 1MHz and rising/falling time below 6ns are presented. Also, important issues for the practical use of the SiC-based PPM are discussed. Experiments results from the developed PPMs are shown to verify the proposed works.
Funding Information
  • Korea Electrotechnology Research Institute
  • National Research Council of Science and Technology
  • Ministry of Science and ICT (18-12-N0101-41)

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