Quantitative ASAXS of germanium inhomogeneities in amorphous silicon–germanium alloys
Authors:
- G. GoerigkGGG. Goerigk
- D.L. WilliamsonDWD.L. Williamson
- 1 March 2001
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 281 (1-3) , 181-188
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Nanostructured Ge distribution in a-SiGe:H alloys from anomalous small-angle X-ray scattering studiesSolid State Communications, 1998
- Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficienciesApplied Physics Letters, 1997
- High performance glow discharge a-Si1−xGex:H of large xJournal of Applied Physics, 1997
- Improvement of microstructure of amorphous silicon–germanium alloys by hydrogen dilutionJournal of Applied Physics, 1995
- Nanostructure of a-Si:H and Related Materials by Small-Angle X-Ray ScatteringMRS Proceedings, 1995
- The mott lecture. Structural and electronic properties of amorphous SiGe:H alloysJournal of Non-Crystalline Solids, 1993
- Microstructural transition and degraded opto-electronic properties in amorphous SiGe:H alloysApplied Physics Letters, 1993
- Hydrogenated amorphous semiconductorsJournal of Electronic Materials, 1993
- JUSIFA—A new user-dedicated ASAXS beamline for materials scienceReview of Scientific Instruments, 1989
- Scattering by an Inhomogeneous Solid. II. The Correlation Function and Its ApplicationJournal of Applied Physics, 1957