Intensity and phase noise in microcavity surface-emitting semiconductor lasers
- 22 July 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (4) , 399-401
Abstract
The noise characteristics of vertical-cavity surface-emitting (VCSE) lasers are studied by using the Langevin rate equations modified suitably to include the enhanced spontaneous emission occurring in such microcavity lasers. The intensity and frequency noise spectra show the effects induced by suppression of relaxation oscillations. However, such a suppression depends on the output power as well as on transverse dimensions of the VCSE laser. The laser linewidth increases considerably as a result of enhanced spontaneous emission.Keywords
This publication has 7 references indexed in Scilit:
- Spontaneous emission factor of a microcavity DBR surface-emitting laserIEEE Journal of Quantum Electronics, 1991
- Surface emitting laser arrays with uniformly separated wavelengthsElectronics Letters, 1990
- Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasersApplied Physics Letters, 1989
- Rate equation analysis of microcavity lasersJournal of Applied Physics, 1989
- Low-threshold electrically pumped vertical-cavity surface-emitting microlasersElectronics Letters, 1989
- Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laserApplied Physics Letters, 1989
- High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasersApplied Physics Letters, 1989