Dielectric reliability in deep-submicron technologies: From thin to ultrathin oxides
Authors:
- E. VincentEVE. Vincent
- S. BruyereSBS. Bruyere
- C. PapadasCPC. Papadas
- P. MortiniPMP. Mortini
- 1 October 1997
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 37 (10-11) , 1499-1506
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Temperature dependence of charge build-up mechanisms and breakdown phenomena in thin oxides under Fowler-Nordheim injectionSolid-State Electronics, 1997
- A method for the assessment of oxide charge density and centroid in metal-oxide-semiconductor structures after uniform gate stressApplied Physics Letters, 1996
- On the charge build-up mechanisms in gate dielectricsSolid-State Electronics, 1994
- Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconJournal of Applied Physics, 1993
- Degradation and breakdown of silicon dioxide films on siliconApplied Physics Letters, 1992
- Trap generation and occupation dynamics in SiO2 under charge injection stressJournal of Applied Physics, 1986
- Direct measurement of the energy distribution of hot electrons in silicon dioxideJournal of Applied Physics, 1985
- Generation of positive charge in silicon dioxide during avalanche and tunnel electron injectionJournal of Applied Physics, 1985
- High-field electron trapping in SiO2Journal of Applied Physics, 1977
- Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structuresJournal of Applied Physics, 1976