Comparison of experimental measurements of power MOSFET SEBs in dynamic and static modes
Authors:
- P. CalvelPCP. Calvel
- C. PeyrotteCPC. Peyrotte
- A. BaigetABA. Baiget
- E.G. StassinopoulosESE.G. Stassinopoulos
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6) , 1310-1314
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Low temperature proton induced upsets in NMOS resistive load static RAMIEEE Transactions on Nuclear Science, 1988
- SEU Sensitivity of Power Converters with MOSFETs in SpaceIEEE Transactions on Nuclear Science, 1987
- First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross SectionsIEEE Transactions on Nuclear Science, 1987