Molecular beam epitaxy
Authors:
- J.R. ArthurJAJ.R. Arthur
- 1 January 1975
- journal article
- Published by Elsevier in Progress in Solid State Chemistry
- Vol. 10, 157-191
Abstract
No abstract availableKeywords
This publication has 99 references indexed in Scilit:
- Surface-State Transitions of Silicon in Electron Energy-Loss SpectraPhysical Review Letters, 1973
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973
- Elastic-Scattering Effects in Characteristic Electron-Energy-Loss Spectra of Ni(110) Adsorbate SurfacesPhysical Review B, 1972
- Growth of Periodic Structures by the Molecular-Beam MethodApplied Physics Letters, 1971
- Electron Transport in GaAsPhysical Review B, 1971
- Surface structures and photoluminescence of molecular beam epitaxial films of GaAsSolid-State Electronics, 1971
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers in-Type GaAsPhysical Review B, 1969
- Effect of Surface Damage on the Reflectance of Germanium in the 2650–10 000-Å RegionJournal of the Optical Society of America, 1963
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951