Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms
Authors:
- Alexander S. GrashchenkoAGAlexander S. Grashchenko
- Sergey A. KukushkinSKSergey A. Kukushkin
- Andrey V. OsipovAOAndrey V. Osipov
- Alexey V. RedkovARAlexey V. Redkov
- 1 August 2022
- journal article
- research article
- Published by Elsevier in Catalysis Today
- Vol. 397-399, 375-378
Abstract
No abstract availableKeywords
Funding Information
- Russian Academy of Sciences (FFNF-2021-0001)
- Ministry of Education and Science of the Russian Federation
This publication has 15 references indexed in Scilit:
- Basic psychological needs satisfaction and fear of missing out: Friend support moderated the mediating effect of individual relative deprivationPsychiatry Research, 2018
- A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3)REVIEWS ON ADVANCED MATERIALS SCIENCE, 2018
- Quantum mechanical theory of epitaxial transformation of silicon to silicon carbideJournal of Physics D: Applied Physics, 2017
- Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substratePhysica B: Condensed Matter, 2017
- Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate typesSemiconductors, 2017
- Review of Silicon Carbide Power Devices and Their ApplicationsIEEE Transactions on Industrial Electronics, 2017
- Graphene growth on silicon carbide: A reviewPhysica Status Solidi (a), 2016
- Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A reviewPhysics of the Solid State, 2014
- Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor filmsJournal of Physics D: Applied Physics, 2014
- Development of stable supports consisting of SiCSi composite for high temperature combustion catalystsCatalysis Today, 1995