Interfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer
- 30 June 2021
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 127 (1) , 016803
Abstract
The observation of replica bands by angle-resolved photoemission spectroscopy has ignited interest in the study of electron-phonon coupling at low carrier densities, particularly in monolayer , where the appearance of replica bands has motivated theoretical work suggesting that the interfacial coupling of electrons in the FeSe layer to optical phonons in the substrate might contribute to the enhanced superconducting pairing temperature. Alternatively, it has also been recently proposed that such replica bands might instead originate from extrinsic final state losses associated with the photoemission process. Here, we perform a quantitative examination of replica bands in monolayer , where we are able to conclusively demonstrate that the replica bands are indeed signatures of intrinsic electron-boson coupling, and not associated with final state effects. A detailed analysis of the energy splittings and relative peak intensities between the higher-order replicas, as well as other self-energy effects, allows us to determine that the interfacial electron-phonon coupling in the system corresponds to a value of , providing valuable insights into the enhancement of superconductivity in monolayer . The methodology employed here can also serve as a new and general approach for making more rigorous and quantitative comparisons to theoretical calculations of electron-phonon interactions and coupling constants.
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Funding Information
- Air Force Office of Scientific Research (FA9550-21-1-0168, FA9550-15-1-0474)
- National Science Foundation (DMR-1709255, DGE-1650441, DMR-1719875, ECCS-1542081)
- Gordon and Betty Moore Foundation (GBMF3850)
- Cornell University
- Indo-US Science and Technology Forum
- Cornell Center for Materials Research
- U.S. Department of Energy (DE-AC02-05CH11231)
- Office of Science
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (DMR-1539918)
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