Robust Parameter Extraction for the R3 Nonlinear Resistor Model for Diffused and Poly Resistors
Authors:
- 9 April 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 25 (4) , 555-563
Abstract
This paper presents robust algorithms to determine the parameters of the R3 nonlinear resistor model for both diffused and poly resistors. Extraction of many R3 parameters is simplified if it is based on the zero-bias conductance $G_{0}$, because $G_{0}$ is not affected by velocity saturation or self-heating. We present techniques to reliably determine $G_{0}$, even when measured data are noisy or highly nonlinear, and show how to extract basic resistance parameters, temperature coefficients, and depletion pinching parameters using $G_{0}$. We describe how to determine thermal conductance parameters, and present a final parameter optimization strategy that prevents imprecision in modeling $G_{0}$ from compromising the accuracy of fitting resistor nonlinearity.
Keywords
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