SOI power devices

Authors:
  • DGD. Garner
    D. Garner
  • KSK. Sheng
    K. Sheng
  • APA. Popescu
    A. Popescu
  • HLH.T. Lim
    H.T. Lim
  • VMV.I. Milne
    V.I. Milne
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Abstract
This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltage and low-voltage CMOS are also analysed.